ne696m01 nec's npn silicon high frequency transistor ? high f t : 14 ghz typ at 3 v, 10 ma ? low noise figure: nf = 1.6 db typ at 2 ghz ? high gain: |s 21e | 2 = 14 db typ at 2 ghz ? 6 pin small mini mold package ? excellent low voltage, low current performance features outline dimensions (units in mm) package outline m01 description nec's ne696m01 is an npn high frequency silicon epitaxial transistor (ne685) encapsulated in an ultra small 6 pin sot- 363 package. its four emitter pins decrease emitter inductance resulting in 3 db more gain compared to conventional sot-23 and sot-143 devices. the ne696m01 is ideal for lna and pre-driver applications up to 2.4 ghz where low cost, high gain, low voltage and low current are prime considerations. california eastern laboratories 3. for tape and reel version use part number ne696m01-t1, 3k per reel. part number ne696m01 package outline m01 symbols parameters and conditions units min typ max i cbo collector cutoff current at v cb = 5 v, i e = 0 a 0.1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 0.1 h fe 1 forward current gain at v ce = 3 v, i c = 10 ma 80 120 160 f t gain bandwidth at v ce = 3 v, i c = 10 ma, f = 2 ghz ghz 14 cre 2 feedback capacitance at v cb = 3 v, i e = 0, f = 1 mhz pf 0.15 |s 21e | 2 insertion power gain at v ce = 3 v, i c = 10 ma, f = 2 ghz db 14 nf noise figure at v ce = 3 v, i c = 3 ma, f = 2 ghz db 1.6 electrical characteristics (t a = 25 c) notes: 1. pulsed measurement, pulse width 350 s, duty cycle 2 %. 2.the emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. 2.1 0.1 1.25 0.1 0 ~ 0.1 0.15 0.9 0.1 0.7 2.0 0.2 0.65 1.3 1 2 3 4 5 6 0.2 (all leads) +0.10 - 0.05 t95 top view side view note: pin 3 is identified with a circle on the bottom of the package. pin out 1. emitter 2. emitter 3. base 4. emitter 5. emitter 6. collector
absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v cbo collector to base voltage v 9 v ceo collector to emitter voltage v 6 v ebo emitter to base voltage v 2 i c collector current ma 30 p t total power dissipation mw 150 t j junction temperature c 150 t stg storage temperature c -65 to +150 notes: 1. operation in excess of any one of these parameters may result in permanent damage. ne696m01 part number quantity packaging NE696M01-T1-A 3000 tape & reel v ce = 1 v , i c = 3 ma 1.0 1.4 18.5 0.53 79 0.27 1.4 1.46 16.4 0.47 95 0.13 1.7 1.55 15.2 0.43 111 0.19 2.0 1.8 14.5 0.39 132 0.16 3.0 2.3 11.0 0.3 177 0.10 v ce = 2 v , i c = 1 ma freq. nf opt g a opt (ghz) (db) (db) mag ang rn/50 ne696m01 typical noise parameters (t a = 25 ? c) 0.5 .94 16.8 0.72 41 0.52 0.8 1.1 14.8 0.66 65 0.44 1.0 1.25 13.8 0.63 79 0.39 1.5 1.55 11.4 0.56 104 0.31 2.0 1.94 9.6 0.5 138 0.17 3.0 2.65 7.0 0.46 -173 0.07 0.5 1.2 23.0 0.49 37 0.38 0.8 1.32 20.3 0.44 62 0.27 1.0 1.47 18.8 0.42 76 0.30 1.5 1.63 15.8 0.39 98 0.23 2.0 1.82 13.0 0.33 126 0.18 3.0 2.17 9.8 0.25 173 0.10 v ce = 2 v , i c = 5 ma v ce = 3 v , i c = 5 ma 0.5 1.25 24.2 0.5 37 0.39 0.8 1.35 20.7 0.45 62 0.26 1.0 1.41 18.8 0.44 78 0.29 1.5 1.58 15.2 0.41 97 0.24 2.0 1.81 13.7 0.34 126 0.20 3.0 2.29 12.0 0.29 164 0.09 ordering information typical performance curves (t a = 25 ? c) 0 10 20 30 40 50 0.5 1.0 v ce = 2 v total power dissipation vs. ambient temperature collector current vs. base to emitter voltage total power dissipation, p t (mw) ambient temperature, t a ( ? c) collector current, i c (ma) base to emitter voltage, v be (v) 25 20 15 10 5 0 1.0 2.0 3.0 200 a 180 a 160 a 140 a 120 a 100 a 80 a 60 a 40 a i b = 20 a 500 200 100 50 20 10 1 2 5 10 20 50 100 v ce = 2 v v ce = 1 v collector current vs. collector to emitter voltage dc current gain vs. collector current collector current, i c (ma) dc current gain, hfe collector current, i c (ma) collector to emitter voltage, v ce (v) 200 100 0 0 50 100 150
ne696m01 typical performance curves (t a = 25 c) collector to emitter voltage, v ce (v) collector current vs. collector to emitter voltage dc current gain vs. collector current collector current, i c (ma) dc current gain, h fe (ma) collector current, i c (ma) 30.0m 2.00m /div 0.00 0.00 vce (v) 500m /div 6.00 ic 150.0 10.0 /div 50.0 0.00 ic (a) 2.00m /div 30.0m hfe ne696m01 v ce = 1 v, i c = 5 ma frequency s 11 s 21 s 12 s 22 k mag 1 (ghz) mag ang mag ang mag ang mag ang (db) 0.40 0.728 -52.30 10.962 136.50 0.040 56.00 0.832 -32.90 0.303 24.378 0.50 0.684 -64.20 10.349 128.40 0.046 51.30 0.779 -39.10 0.338 23.521 0.60 0.639 -73.80 9.557 121.20 0.052 46.70 0.732 -44.00 0.398 22.643 0.70 0.594 -83.40 8.885 114.50 0.056 42.10 0.687 -48.50 0.463 22.005 0.80 0.556 -92.50 8.236 108.30 0.059 38.80 0.647 -52.30 0.522 21.449 0.90 0.522 -100.70 7.644 102.80 0.062 35.70 0.615 -55.70 0.579 20.909 1.00 0.492 -108.50 7.116 97.80 0.063 33.80 0.587 -58.60 0.640 20.529 1.20 0.442 -123.40 6.242 88.70 0.067 29.60 0.542 -64.10 0.748 19.692 1.40 0.406 -137.30 5.522 80.40 0.069 26.80 0.509 -69.10 0.860 19.032 1.60 0.380 -150.60 4.931 73.00 0.070 24.40 0.485 -73.40 0.976 18.478 1.80 0.362 -164.30 4.452 65.90 0.072 22.70 0.469 -77.90 1.069 16.304 2.00 0.353 -176.70 4.047 59.30 0.074 21.90 0.459 -81.80 1.151 15.018 2.25 0.351 167.30 3.606 51.40 0.075 20.20 0.451 -86.70 1.270 13.695 2.50 0.360 152.60 3.248 43.80 0.077 20.20 0.449 -91.40 1.353 12.702 2.75 0.377 138.80 2.942 36.40 0.079 19.30 0.453 -96.10 1.417 11.872 3.00 0.397 127.30 2.676 29.70 0.081 18.50 0.458 -100.50 1.475 11.110 3.50 0.451 107.70 2.251 16.40 0.085 18.50 0.477 -108.90 1.530 9.936 4.00 0.498 93.20 1.930 4.10 0.092 17.50 0.496 -118.00 1.515 8.980 4.50 0.538 82.30 1.690 -7.90 0.101 16.20 0.513 -128.80 1.460 8.216 5.00 0.567 74.10 1.509 -19.70 0.113 13.60 0.532 -142.40 1.371 7.622 5.50 0.587 67.30 1.361 -31.50 0.127 9.40 0.555 -158.60 1.283 7.107 6.00 0.608 61.10 1.229 -43.20 0.141 4.00 0.593 -175.70 1.175 6.870 6.50 0.630 55.20 1.091 -54.40 0.155 -1.40 0.637 168.60 1.077 6.778 7.00 0.657 49.10 0.949 -63.80 0.164 -6.40 0.678 157.90 1.009 7.057 7.50 0.690 42.90 0.818 -70.40 0.171 -9.20 0.719 154.80 0.911 6.798 typical scattering parameters (t a = 25 c) mag = maximum available gain msg = maximum stable gain note: 1. gain calculation: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | ,
0.2 0.4 0.6 0.8 1 1.5 2 3 4 5 10 20 50 -50 20 10 5 4 3 2 1.5 1 0.8 0.6 0.4 0.2 -0.2 -0.4 -0.6 -0.8 -1 -1.5 -2 -3 -4 -5 -10 -20 s 11 s 22 270? 180? 225? 315? 135? 0? 90? 5.00 10.00 15.00 45? s 21 s 12 0.05 0.10 0.15 ne696m01 typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) 0.40 0.941 -25.2 2.924 154.2 0.037 67.9 0.977 -16.3 0.181 18.978 0.80 0.874 -49.7 2.776 132.3 0.066 51.3 0.930 -31.3 0.255 16.239 1.00 0.833 -61.1 2.642 122.1 0.077 43.1 0.904 -37.9 0.315 15.354 2.00 0.610 -119.1 2.104 75.2 0.097 9.5 0.798 -66.0 0.662 13.363 2.50 0.536 -150.6 1.808 54.7 0.090 -2.7 0.765 -77.3 0.919 13.030 3.00 0.502 176.8 1.551 36.1 0.077 -10.4 0.755 -87.4 1.238 10.100 4.00 0.550 123.5 1.121 4.0 0.053 -0.2 0.769 -107.1 2.016 7.495 5.00 0.617 93.4 0.852 -22.3 0.071 25.0 0.789 -133.7 1.607 6.222 6.00 0.660 74.9 0.665 -45.6 0.116 21.5 0.821 -169.3 1.048 6.238 ne696m01 v ce = 2 v, i c = 1 ma v ce = 2 v, i c = 5 ma 0.40 0.753 -46.2 11.297 139.6 0.030 59.6 0.871 -27.0 0.296 25.758 0.80 0.583 -83.4 8.809 111.9 0.047 43.1 0.715 -43.8 0.509 22.728 1.00 0.513 -98.3 7.704 101.4 0.051 37.7 0.660 -49.4 0.628 21.791 2.00 0.338 -165.4 4.496 61.9 0.059 27.5 0.541 -70.7 1.163 16.374 2.50 0.333 161.7 3.634 46.0 0.062 27.6 0.530 -80.0 1.357 14.112 3.00 0.366 134.1 3.005 31.6 0.066 27.8 0.538 -89.2 1.460 12.563 4.00 0.468 97.3 2.169 5.4 0.081 29.4 0.575 -107.7 1.386 10.575 5.00 0.543 77.4 1.697 -19.0 0.107 25.2 0.610 -132.7 1.152 9.638 6.00 0.591 64.3 1.381 -43.2 0.141 14.8 0.666 -167.0 0.921 9.910 mag = maximum available gain msg = maximum stable gain note: 1. gain calculation: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , coordinates in ohms frequency in gh z v ce = 2 v, i c = 10 ma
ne696m01 ne696m01 v ce = 3 v, i c = 5 ma frequency s 11 s 21 s 12 s 22 k mag 1 (ghz) mag ang mag ang mag ang mag ang (db) 0.40 0.765 -43.9 11.370 140.8 0.028 60.3 0.885 -25.1 0.299 26.086 0.80 0.596 -79.7 8.988 113.4 0.043 44.4 0.739 -41.1 0.506 23.202 1.00 0.525 -94.2 7.898 102.7 0.046 39.6 0.687 -46.5 0.627 22.348 2.00 0.335 -160.2 4.669 63.0 0.054 30.6 0.573 -67.5 1.159 16.952 2.50 0.323 166.2 3.781 47.0 0.057 30.6 0.562 -76.6 1.352 14.673 3.00 0.353 137.5 3.134 32.4 0.062 31.8 0.570 -85.9 1.422 13.178 4.00 0.456 99.2 2.266 5.9 0.078 34.1 0.606 -104.5 1.312 11.285 5.00 0.533 78.9 1.773 -18.6 0.106 29.7 0.642 -129.8 1.053 10.827 6.00 0.583 65.7 1.442 -43.1 0.142 18.5 0.695 -164.2 0.823 10.067 typical scattering parameters (t a = 25 c) mag = maximum available gain msg = maximum stable gain note: 1. gain calculation: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | ,
5-192 ne696m01 ne696m01 nonlinear model schematic model range frequency: 0.4 to 7.5 ghz bias: v ce = 0.5 v to 5 v, i c = 0.5 ma to 10 ma date: 2/6/97 cbe_pkg cce_pkg 0.5pf collector lcx cce q1 lb lbx base 0.15pf 0.58nh 0.05pf ccb lex 0.15nh le 0.22nh emitter 0.13pf 0.15nh 1.3nh units parameter units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps parameters 696m01 c cb 0.05e-12 c ce 0.15e-12 l b 1.3e-9 l e 0.22e-9 c cepkg 0.5e-12 c bepkg 0.13e-12 l bx 0.15e-9 l cx 0.58e-9 l ex 0.15e-9 additional parameters parameters q1 parameters q1 is 7e-16 mjc 0.34 bf 119 xcjc 0.6 nf 1.06 cjs 0 vaf 20.5 vjs 0.75 ikf 0.18 mjs 0 ise 1e-13 fc 0.5 ne 2 tf 4e-12 br 6.5 xtf 5.2 nr 1.08 vtf 4.58 var 18 itf 0.01 ikr 0.015 ptf 0 isc 0 tr 1e-9 nc 2 eg 1.11 re 1.23 xtb 0 rb 11 xti 3 rbm 2.5 kf 0 irb 0.009 af 1 rc 5 cje 0.4e-12 vje 0.68 mje 0.5 cjc 0.18e-12 vjc 0.5 (1) gummel-poon model bjt nonlinear model parameters (1) life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec com p ound semiconductor devices, ltd . 08/21/2003
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